Effect of Edge Roughness on Resistance and Switching Voltage of Magnetic Tunnel Junctions

We investigate the impact of edge roughness on electrical transport properties magnetic tunnel junctions using non-equilibrium Green’s function formalism. have modeled as a stochastic variation in cross-sectional profile junction characterized by stretched exponential decay correlation function. The shape and size changes transverse energy mode gives rise to variations resistance switching voltage junction. find that are larger is scaled down due quantum confinement effect. A model proposed for efficient calculation effects approximating geometry circle with same area. Further improvement can be obtained area an ellipse aspect ratio determined first eigenvalue corresponding 2D cross-section. These results would useful designing reliable spin transfer torque-magnetic random access memory (STT-MRAM) ultra-small junctions.